SOS-based RF Switch ICs
| ML8122x - RF Antenna Switches |
The chip also operates with one-fifth lower power consumption than RF switches with GaAS compound semiconductors and withstands over 2,000V of ESD pressure in HBM. Customers can handle the chip the same way as a CMOS LSI in their manufacturing line.
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| RF Antenna Switches, Reflective DPDT MOSFET RF line-up |
| Part Number | Operating Frequency (MHz) |
IIP3 (dBm) |
Insertion loss (dBm) |
Isolation (dB) |
Supply Voltage |
Operating Temperature |
Packages | Product Status | |
|---|---|---|---|---|---|---|---|---|---|
| ML8122MDZ7 | DC to 3000 | +60 | 0.5dB @ 900MHz, 0.7dB @ 1.9GHz | 22dB @ 900MHz, 14dB @ 1.9GHz | 2.5~3.3V | -40~+85°C | 10SON | VP | |
| ML81221GD | DC to 3000 | +45 | 0.5dB @ 900MHz, 0.9dB @ 1.9GHz | 30dB @ 900MHz, 22dB @ 1.9GHz | 2.5~3.3V | -40~+85°C | 12WQFN | VP | |
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ML81221GD, a CMOS switch with high-isolation that is developed on SOS (silicon-on-sapphire) technology based on Peregrine Semiconductor Corp's UltraCMOS™ process technology. 
